An electrochemical study of tin oxide thin film in borate buffer solutions
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چکیده
منابع مشابه
Tin oxide transparent thin-film transistors
A SnO2 transparent thin-film transistor (TTFT) is demonstrated. The SnO2 channel layer is deposited by RF magnetron sputtering and then rapid thermal annealed in O2 at 600 ̊C. The TTFT is highly transparent, and enhancement-mode behaviour is achieved by employing a very thin channel layer (10–20 nm). Maximum field-effect mobilities of 0.8 cm2 V−1 s−1 and 2.0 cm2 V−1 s−1 are obtained for enhancem...
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Transparent SnO2 thin films were deposited on porcelain substrates using a chemical vapor deposition technique based on the hydrolysis of SnCl4 at elevated temperatures. A reduced pressure self-contained evaporation chamber was designed for the process where the pyrolysis of SnCl4 at the presence of water vapor was carried out. Resistive gas sensors were fabricated by providing ohmic contacts o...
متن کاملInkjet-printed zinc tin oxide thin-film transistor.
Recently, there has been considerable interest in adapting printing approaches that are typically used in the graphic arts to the printing of electronic circuits and circuit components. We report the fabrication of solution-processed oxide transistors using inkjet printing. A zinc tin oxide sol-gel precursor is utilized as the ink for directly printing a thin uniform semiconducting layer. The p...
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چکیده ندارد.
15 صفحه اولAtomic layer deposited zinc tin oxide channel for amorphous oxide thin film transistors
Bottom-gate thin film transistors with amorphous zinc tin oxide channels were grown by atomic layer deposition. The films maintained their amorphous character up to temperatures over 500 C. The highest field effect mobility was 13 cm/V s with on-to-off ratios of drain current 10–10. The lowest subthreshold swing of 0.27 V/decade was observed with thermal oxide as a gate insulator. The channel l...
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ژورنال
عنوان ژورنال: Journal of the Brazilian Chemical Society
سال: 2003
ISSN: 0103-5053
DOI: 10.1590/s0103-50532003000400006